Samsung’s UFS 4.0 Flash storage Announcement

Samsung UFS 4.0

Samsung Semiconductor has released details on their latest Samsung UFS 4.0 storage technology. It uses Samsung’s 7th Generation V-NAND memory. Alongside, this uses a unique controller which provides crazy read and write speeds as well as significant power savings. Samsung, however, did not announce this news on their typical Newsroom website, but rather via Twitter. However, there are a lot of tweets going over this issue.

As per the company, Samsung’s UFS 4.0 storage, based on Samsung’s 7th-generation V-NAND, is the industry’s “best performing” UFS 4.0 memory. UFS 4.0 modules will be available in different sizes up to 1TB. that pack a maximum dimension of 11mm x 13mm x 1mm. The company is planning to start mass production in the third quarter of 2022.


Samsung UFS 4.0 claims sequential read and write rates of up to 4,200MB/s and 2,800MB/s, respectively. According to the tweet shown above, it says “UFS 4.0 has a per-lane speed of up to 23.2 Gbps, which is twice as fast as UFS 3.1. This much bandwidth is ideal for 5G handsets that need to handle massive quantities of data. This memory unit will be used more in the future automotive applications, AR, and VR.”

With the new standard, phone battery life may be enhanced as well. In testing, of this UFS 4.0 memory outperformed UFS 3.1 by 46 percent, with sequential read performance of up to 6.0 MB/s per milliampere (mA).

The Samsung UFS 4.0 will have an “improved” Replay Protected Memory Block (RPMB), which is a mechanism for eMMC, UFS, and NVMe Flash storage for mobile devices that protects against replay attacks on programs like digital wallets. RPMB secures memory partitions by demanding authentication for reading and writing operations. According to the company, the RPMB’s UFS 4.0 architecture is 1.8 times more efficient at keeping secrets.


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